SEMICONDUCTOR OPTOELECTRONIC DEVICES:INTRODUCTION TO PHYSICS AND SIMULATIONpdf电子书版本下载

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Ⅰ Fundamentals 1

1 Introduction to Semiconductors 3

1.1 Electrons, Holes, Photons, and Phonons 3

1.2 Fermi distribution and density of states 5

1.3 Doping 7

2 Electron energy bands 13

2.1 Fundamentals 13

2.1.1 Electron Waves 13

2.1.2 Effective Mass of Electrons and Holes 16

2.1.3 Energy Band Gap 20

2.2 Electronic Band Structure: The k.p Method 23

2.2.1 Two-Band Model （Zinc Blende） 24

2.2.2 Strain Effects （Zinc Blende） 27

2.2.3 Three- and Four-Band Models （Zinc Blende） 30

2.2.4 Three-Band Model for Wurtzite Crystals 32

2.3 Quantum Wells 39

2.4 Semiconductor Alloys 43

2.5 Band Offset at Heterointerfaces 43

3 Carrier transport 49

3.1 Drift and Diffusion 49

3.2 pn-Junctions 50

3.3 Heterojunctions 51

3.4 Tunneling 54

3.5 Boundary Conditions 56

3.5.1 Insulator-Semiconductor Interface 57

3.5.2 Metal-Semiconductor Contact 58

3.6 Carrier Mobility 61

3.7 Electron-Hole Recombinalion 67

3.7.1 Radiative Recombination 67

3.7.2 Nonradiative Recombination 68

3.8 Electron-Hole Generation 71

3.8.1 Photon Absorption 71

3.8.2 Impact Ionization 72

3.8.3 Band-to-Band Tunneling 76

3.9 Advanced Transport Models 78

3.9.1 Energy Balance Model 78

3.9.2 Boltzmann Transport Equation 81

4 Optical Waves 83

4.1 Maxwell’s Equations 83

4.2 Dielectric Function 85

4.2.1 Absorption Coefficient 87

4.2.2 Index of Refraction 91

4.3 Boundary Conditions 94

4.4 Plane Waves 95

4.5 Plane Waves at Interfaces 97

4.6 Multilayer Structures 101

4.7 HelmholtzWave Equations 102

4.8 Symmetric Planar Wayeguides 104

4.9 Rectangular Waveguides 108

4.10 Facet Reflection of Waveguide Modes 110

4.11 Periodic Structures 112

4.12 Gaussian Beams 114

4.13 Far Field 116

5 Photon Generation 121

5.1 Optical Gain 121

5.1.1 Transition Matrix Element 124

5.1.2 Transition Energy Broadening 127

5.1.3 Strain Effects 131

5.1.4 Many-Body Effects 135

5.1.5 Gain Suppression 135

5.2 Spontaneous Emission 136

6 Heat Generation and Dissipation 141

6.1 Heat Flux Equation 141

6.2 Heat Generation 145

6.2.1 Joule Heat 145

6.2.2 Recombination Heat 145

6.2.3 Thomson Heat 146

6.2.4 Optical Absorption Heat 146

6.3 Thermal Resistance 147

6.4 Boundary Conditions 147

Ⅱ Devices 149

7 Edge-Emitting Laser 151

7.1 Introduction 151

7.2 Models and Material Parameters 156

7.2.1 Drift—Diffusion Model 157

7.2.2 Gain Model 158

7.2.3 Optical Model 158

7.3 Cavity Length Effects on Loss Parameters 161

7.4 Slope Efficiency Limitations 162

7.5 Temperature Effects on Laser performance 164

8 Vertical-Cavity Laser 171

8.1 Introduction 171

8.2 Long-Wavelength Vertical-Cavity Lasers 171

8.3 Model and Parameters 174

8.4 Canrier Transport Effects 175

8.5 Thermal Analysis 178

8.6 Oplical Simulation 181

8.7 Temperature Effects on the Optical Gain 184

9 Nitride Light Emitters 187

9.1 Introduction 187

9.2 Nitride Material Properties 188

9.2.1 Carrier Transport 188

9.2.2 Energy Bands 191

9.2.3 Polarization 192

9.2.4 Refractive Index 194

9.2.5 Thermal Conductivity 195

9.3 InGaN/GaN Light-Emitting Diode 196

9.3.1 Device Structure 196

9.3.2 Polarization Effects 197